Micron introduced UFS 4.0 storage technology
By ForGeeks Micron has unveiled its new — UFS 4.0 storage solution. The company said it has already sent qualification samples to «selected global smartphone manufacturers and chipset vendors».
The new technology will be used to produce 256GB, 512GB and 1TB drives. Volume production will start in the second half of this year, so the first smartphones with UFS 4.0 storage will be a while.
This storage is built on 232-layer TLC flash memory. According to the company, its six-layer NAND architecture provides higher random read throughput. Compared to previous-generation storage, it has 100 percent more write throughput and 75 percent more read throughput.
Micron UFS 4.0 enables up to 4,300MB/s sequential read performance and up to 4,000MB/s sequential write performance. This is faster than Samsung UFS 4.0.
In addition, the new UFS 4.0 chips are 25% more energy efficient and promise to reduce write latency by 10%.
