Samsung unveils breakthrough ultra-efficient FeFET-based memory

Samsung Electronics, one of the largest players in the global memory chip market, continues to aggressively pursue new technologies to strengthen its leading position. The company’s researchers have announced an important technological breakthrough that simultaneously reduces power consumption and increases storage density.

Samsung has introduced ultra energy-efficient memory based on ferroelectric transistors (FeFETs). This technology allows for increased chip capacity without increasing power consumption. According to the company, the use of ferroelectric material in FeFET memory reduces power consumption by up to 96% compared to traditional NAND memory.

Factually, this means that the new chips will be able to store significantly more data at the same or even lower power consumption. This approach is especially important for devices where power efficiency is critical, such as mobile devices, edge computing solutions and artificial intelligence systems.

Actually, this means that the new chips will be able to store significantly more data with the same or even lower power consumption.

The technology also solves a fundamental problem with classic NAND memory: increasing capacity typically leads to higher power consumption, while trying to save energy — leads to lower capacity. While the development is still a research project, the very fact that it has been announced indicates that Samsung is considering incorporating FeFET into future products.

The technology also addresses a fundamental problem with classic NAND memory: increasing capacity typically leads to higher power consumption, and trying to save power — reduces capacity.

Demand for memory is already at record levels, and the expected «supercycle» of the market is fueled by the growing needs of AI chip makers. Therefore, more power-efficient and denser solutions —are exactly what the market needs in the near future.